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ALD114835/ALD114935
QUAD/DUAL N-CHANNEL DEPLETION MODE EPAD?
PRECISION MATCHED PAIR MOSFET ARRAY
VGS(th)= -3.50V
GENERAL DESCRIPTION
ALD114835/ALD114935 are high precision monolithic quad/dual depletion mode
N-Channel MOSFETs matched at the factory using ALD’s proven EPAD CMOS
technology. These devices are intended for low voltage, small signal applica-
tions. They are excellent functional replacements for normally-closed relay ap-
plications, as they are normally on (conducting) without any power applied, but
could be turned off or modulated when system power supply is turned on. These
MOSFETs have the unique characteristics of, when the gate is grounded, oper-
ating in the resistance mode for low drain voltage levels and in the current
source mode for higher voltage levels and providing a constant drain current.
ALD114835/ALD114935 MOSFETs are designed for exceptional device elec-
trical characteristics matching. As these devices are on the same monolithic
chip, they also exhibit excellent temperature tracking characteristics. They are
versatile as design components for a broad range of analog applications such
as basic building blocks for current sources, differential amplifier input stages,
transmission gates, and multiplexer applications. Besides matched pair electri-
cal characteristics, each individual MOSFET also exhibits well controlled pa-
rameters, enabling the user to depend on tight design limits. Even units from
different batches and different date of manufacture have correspondingly well
matched characteristics.
These depletion mode devices are built for minimum offset voltage and differ-
ential thermal response, and they are designed for switching and amplifying
applications in single 5V to +/-5V systems where low input bias current, low
input capacitance and fast switching speed are desired. These devices exhibit
well controlled turn-off and sub-threshold charactersitics and therefore can be
used in designs that depend on sub-threshold characteristics.
APPLICATIONS
? Functional replacement of Form B (NC) relay
? Zero power fail safe circuits
? Backup battery circuits
? Power failure detector
? Fail safe signal detector
? Source followers and buffers
? Precision current mirrors
? Precision current sources
? Capacitives probes
? Sensor interfaces
? Charge detectors
? Charge integrators
? Differential amplifier input stage
? High side switches
? Peak detectors
? Sample and Hold
? Alarm systems
? Current multipliers
? Analog switches
? Analog multiplexers
? Voltage comparators
? Level shifters
PIN CONFIGURATIONS
ALD114835
The ALD114835/ALD114935 are suitable for use in precision applications which
require very high current gain, beta, such as current mirrors and current sources.
IC*
1
V -
V -
16
IC*
A sample calculation of the DC current gain at a drain current of 3mA and gate
input leakage current of 30pA = 100,000,000. It is recommended that the user,
for most applications, connect the V+ pin to the most positive voltage and the
V- and IC pins to the most negative voltage in the system. All other pins must
have voltages within these voltage limits at all times.
FEATURES
G N1
D N1
S 12
V -
2
3
4
5
V -
M1
M2
V +
15
14
13
12
G N2
D N2
V +
S 34
? Depletion mode (normally ON)
? Precision Gate Threshold Voltages: -3.50V +/- 0.05V
? Nominal R DS(ON) @V GS =0.0V of 540 ?
? Matched MOSFET to MOSFET characteristics
D N4
G N4
IC*
6
7
8
V -
M4
M3
V -
11
10
9
D N3
G N3
IC*
? Tight lot to lot parametric control
? Low input capacitance
? V GS(th) match (V OS ) — 20mV
? High input impedance — 10 12 ? typical
SCL, PCL PACKAGES
ALD114935
? Positive, zero, and negative V GS(th) temperature coefficient
? DC current gain >10 8
? Low input and output leakage currents
IC*
G N1
1
2
V-
V-
8
7
IC*
G N2
ORDERING INFORMATION (“L” suffix denotes lead-free (RoHS))
Operating Temperature Range*
0 ° C to +70 ° C 0 ° C to +70 ° C
D N1
S 12
3
4
M1
M2
V-
6
5
D N2
V-
16-Pin
SOIC
Package
16-Pin
Plastic Dip
Package
8-Pin
SOIC
Package
8-Pin
Plastic Dip
Package
SAL, PAL PACKAGES
*IC pins are internally connected,
ALD114835SCL ALD114835PCL ALD114935SAL ALD114935PAL
connect to V-
* Contact factory for industrial temp. range or user-specified threshold voltage values
Rev 2.1 ?2012 Advanced Linear Devices, Inc. 415 Tasman Drive, Sunnyvale, CA 94089-1706 Tel: (408) 747-1155 Fax: (408) 747-1286
www.aldinc.com
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相关代理商/技术参数
ALD114835SC 制造商:ALD 制造商全称:Advanced Linear Devices 功能描述:QUAD/DUAL N-CHANNEL DEPLETION MODE EPAD MATCHED PAIR MOSFET ARRAYS
ALD114835SCL 功能描述:MOSFET Quad EPAD(R) N-Ch RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
ALD114904 制造商:ALD 制造商全称:Advanced Linear Devices 功能描述:QUAD/DUAL N-CHANNEL DEPLETION MODE EPAD MATCHED PAIR MOSFET ARRAY
ALD114904A 制造商:ALD 制造商全称:Advanced Linear Devices 功能描述:QUAD/DUAL N-CHANNEL DEPLETION MODE EPAD MATCHED PAIR MOSFET ARRAY
ALD114904APA 制造商:ALD 制造商全称:Advanced Linear Devices 功能描述:QUAD/DUAL N-CHANNEL DEPLETION MODE EPAD MATCHED PAIR MOSFET ARRAY
ALD114904APAL 功能描述:MOSFET Dual EPAD(R) N-Ch RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
ALD114904ASA 制造商:ALD 制造商全称:Advanced Linear Devices 功能描述:QUAD/DUAL N-CHANNEL DEPLETION MODE EPAD MATCHED PAIR MOSFET ARRAY
ALD114904ASAL 功能描述:MOSFET Dual EPAD(R) N-Ch RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube